sf21g - t - sf28g - t tai wan semiconductor 1 version:b 170 5 2 a, 50v - 6 00v glass passivated super fast rectifier features glass passivated chip junction high efficiency , low v f high current capability high surge current capability low power loss compliant to rohs directive 2011/65/eu and in accordance to weee 2002/96/ec halogen - free according to iec 61249 - 2 - 21 applications high frequency rectification freewheeling application switching mode converters and inverters in computer and telecommunication. mechanical data case: do - 204ac (do - 15) molding compound meets ul 94v - 0 flammability rating packing code with suffix "g" means green compound (halogen - free) terminal: pure tin plated leads, solderable per j - std - 002 meet jesd 201 class 1a whisker test polarity: as marked w eight: 0.4 g (approximately) key parameters p arameter value unit i f(av) 2 a v rrm 50 - 6 00 v i fsm 5 0 a t j max 1 50 c package do - 204ac (do - 15) configuration single die do - 204ac (do - 15) absolute m aximum ratings ( t a = 25 c unless otherwise noted ) p arameter s ymbol sf21 g - t sf22 g - t sf23 g - t sf24 g - t sf25 g - t sf26 g - t sf27 g - t sf2 8 g - t unit marking code on the device sf21g sf22g sf23g sf24g sf25g sf26g sf27g sf28g r epetitive peak reverse voltage v rrm 50 100 150 200 300 400 500 600 v r everse voltage, total rms value v r(rms) 35 70 105 140 210 280 350 420 v maximum dc blocking voltage v dc 50 100 150 200 300 400 500 600 v f orward current i f(av) 2 a surge p eak forward current, 8.3 ms single half sine - wave superimposed on rated load per diode i fsm 5 0 a junction t emperature t j - 55 to +1 50 c storage temperature t stg - 55 to +1 50 c
sf21g - t - sf28g - t tai wan semiconductor 2 version:b 170 5 thermal performance p arameter s ymbol l imit unit junction - to - ambient thermal resistance r ? ja 65 c /w junction - to - case thermal resistance r ? j c 16 c /w electrical specifications ( t a = 25 c unless otherwise noted ) parameter conditions symbol t yp m ax u nit forward voltage per diode (1) sf21 g - t sf2 2 g - t sf2 3 g - t sf2 4 g - t i f = 2 a, t j = 25 c v f - 0.95 v sf2 5 g - t sf2 6 g - t - 1.30 v sf2 7 g - t sf2 8 g - t - 1.70 v reverse current @ rated v r per diode (2) t j = 25 c i r - 5 a t j = 125 c - 100 a junction capacitance sf21 g - t sf2 2 g - t sf2 3 g - t sf2 4 g - t 1 mhz, v r =4.0v c j 40 - p f sf2 5 g - t sf2 6 g - t sf2 7 g - t sf2 8 g - t 20 - p f reverse recovery time i f =0.5a , i r =1.0a i rr =0.25a t rr - 35 ns notes: 1. pulse test with pw=0.3 ms 2. pulse test with pw= 30 ms ordering information part no. packing code packing code suffix package packing sf2 xg - t (note 1 , 2 ) a0 g do - 15 1,500 / ammo box r0 do - 15 3,500 / 13" paper reel b0 do - 15 1,000 / bulk packing notes: 1. "x" defines voltage from 50v ( sf21 g - t ) to 6 00v ( sf28 g - t ) 2. whole series with green compound (halogen - free) example p/n example p/n part no. packing code packing code suffix description sf21g - t a0g sf21g - t a0 g green compound
sf21g - t - sf28g - t tai wan semiconductor 3 version:b 170 5 characteristics curves (t a = 25c unless otherwise noted) fig . 1 forward current derating curve fig . 2 typical junction capacitance fig . 3 typical reverse characteristics fig . 4 typical forward characteristics 0 1 2 3 0 25 50 75 100 125 150 ambient temperature ( o c) resistive or inductive load 0 25 50 75 100 125 150 0.1 1 10 100 1000 reverse voltage (v) sf25g - t - sf28g - t sf21g - t - sf24g - t f=1.0mhz vsig=50mvp - p 0.1 1 10 100 1000 0 20 40 60 80 100 120 140 t j =25 t j =1 25 t j =75 0.1 1 10 100 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 sf27g - t - sf28g - t pulse width=300s 1% duty cycle sf25g - t - sf26g - t sf21g - t - sf24g - t capacitance (pf) instantaneous reverse current ( a) percent of rated peak reverse voltage (%) instantaneous forward current (a) (a) 0.001 0.01 0.1 1 10 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 pulse width t j =25 c t j =125 c uf1dlw forward voltage (v) average forward current (a)
sf21g - t - sf28g - t tai wan semiconductor 4 version:b 170 5 0 10 20 30 40 50 60 1 10 100 number of cycles at 60 hz 8.3ms single half sine wave characteristics curves (t a = 25c unless otherwise noted) fig . 5 m aximum n on - repetitive f orward s urge c urrent fig.6 reverse recovery time characteristic and test circuit diagram peak forward surge current(a)
sf21g - t - sf28g - t tai wan semiconductor 5 version:b 170 5 package outline dimensions do - 204ac (do - 15) marking diagram p/n = marking code g = green compound yw w = date code f = factory code dim. unit (mm) unit (inch) min max min max a 2.60 3.60 0.102 0.142 b 0.70 0.90 0.028 0.035 c 25.40 - 1.000 - d 5.80 7.60 0.228 0.299 e 25.40 - 1.000 -
sf21g - t - sf28g - t tai wan semiconductor 6 version:b 170 5 notice specifications of the products displayed herein are subject to change without notice. tsc or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. information contained herein is intended to provide a product descrip tion only. no license, express or implied, to any intellectual property rights is granted by this document. except as provided in tscs terms and conditions of sale for such products, tsc assumes no liability whatsoever, and disclaims any express or implie d warranty, relating to sale and/or use of tsc products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. the products shown her ein are not designed for use in medical, life - saving, or life - sustaining applications. customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify tsc for any damages resulting from such impro per use or sale.
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